Inventor · Los Gatos, CA, US

Chan-Lon Yang

125Patents
23h-index
153Co-inventors
93Inventor score

Filing activity: Nov 23, 1990 → Mar 6, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US9564489B2 Multiple gate field-effect transistors having oxygen-scavenged gate stack Electricity 260 Active
US5556501A Silicon scavenger in an inductively coupled RF plasma reactor Electricity 246 Expired
US5423945A Selectivity for etching an oxide over a nitride Electricity 143 Expired
US5888414A Plasma reactor and processes using RF inductive coupling and scavenger temperature control Electricity 120 Expired
US6518195B1 Plasma reactor using inductive RF coupling, and processes Electricity 113 Expired
US6488807B1 Magnetic confinement in a plasma reactor having an RF bias electrode Electricity 99 Expired
US8324059B2 Method of fabricating a semiconductor structure Electricity 96 Active
US6068784A Process used in an RF coupled plasma reactor Electricity 96 Expired
US6251792A Plasma etch processes Electricity 82 Expired
US5210466A VHF/UHF reactor system Electricity 81 Expired
US6444137B1 Method for processing substrates using gaseous silicon scavenger Electricity 68 Expired
US5300460A UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers Electricity 64 Expired
US6545420B1 Plasma reactor using inductive RF coupling, and processes Electricity 61 Expired
US6024826A Plasma reactor with heated source of a polymer-hardening precursor material Electricity 56 Expired
US5312778A Method for plasma processing using magnetically enhanced plasma chemical vapor deposition Electricity 53 Expired
US6184142A Process for low k organic dielectric film etch Electricity 49 Expired
US6209484A Method and apparatus for depositing an etch stop layer Electricity 47 Expired
US6251791A Eliminating etching microloading effect by in situ deposition and etching Electricity 45 Expired
US6127262A Method and apparatus for depositing an etch stop layer Electricity 38 Expired
US6218312A Plasma reactor with heated source of a polymer-hardening precursor material Electricity 35 Expired
US6635565B2 Method of cleaning a dual damascene structure Electricity 26 Expired
US6194325A Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography Electricity 24 Expired
US6426298B1 Method of patterning a dual damascene Electricity 24 Expired
US6368974B1 Shrinking equal effect critical dimension of mask by in situ polymer deposition and etching Electricity 19 Expired
US5990017A Plasma reactor with heated source of a polymer-hardening precursor material Electricity 17 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.