Low contamination high density plasma etch chambers and methods for making the same
US6129808A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1998 |
| Grant date | Oct 10, 2000 |
| Priority date | — |
| Expiry date | Sep 25, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12347
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high density plasma processing chamber including an electrostatic chuck for holding a wafer, and consumable parts that are highly etch resistant, less susceptible to generating contamination and temperature controllable is disclosed. The consumable parts include a chamber liner having a lower support section and a wall that is configured to surround the electrostatic chuck. The consumable parts also include a liner support structure having a lower extension, a flexible wall, and an upper extension. The flexible wall is configured to surround an external surface of the wall of the chamber liner, and the liner support flexible wall is spaced apart from the wall of the chamber liner. The lower extension of the liner support is however, configured to be in direct thermal contact with the lower support section of the chamber liner. Additionally, a baffle ring is part of the consumable parts, and is configured to be assembled with and in thermal contact with the chamber liner and the liner support. A heater is capable of being thermally connected to the liner support for thermally conducting a temperature from the liner support to the chamber liner and the baffle ring. In a most prefer…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.