Insitu doped metal policide
US6130145A · kind A · utility
29Cited by
6References
16Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jan 21, 1998 |
| Grant date | Oct 10, 2000 |
| Priority date | — |
| Expiry date | Jan 21, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28061
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A reduced metal-rich interface between a poly and metal silicide layer is achieved by insitu doping the metal silicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.