Method of forming metal lines in an integrated circuit having reduced reaction with an anti-reflection coating
US6130155A · kind A · utility
6Cited by
18References
4Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jul 2, 1999 |
| Grant date | Oct 10, 2000 |
| Priority date | — |
| Expiry date | Jul 2, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming metal lines is disclosed. The method comprises the steps of: forming a composite metal layer over a wafer, the composite metal layer having a top layer of titanium/titanium nitride; oxidizing the top layer of titanium/titanium nitride to form a layer of titanium oxide; and patterning and etching the composite metal layer to form the metal lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.