Monolithic pattern-sensitive detector
US6130431A · kind A · utility
5Cited by
1References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 12, 1998 |
| Grant date | Oct 10, 2000 |
| Priority date | — |
| Expiry date | Jun 12, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/221
Abstract
Extreme ultraviolet light (EUV) is detected using a precisely defined reference pattern formed over a shallow junction photodiode. The reference pattern is formed in an EUV absorber preferably comprising nickel or other material having EUV- and other spectral region attenuating characteristics. An EUV-transmissive energy filter is disposed between a passivation oxide layer of the photodiode and the EUV transmissive energy filter. The device is monolithically formed to provide robustness and compactness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.