LED with AlGaInP Bragg layer
US6130445A · kind A · utility
15Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 2, 1999 |
| Grant date | Oct 10, 2000 |
| Priority date | — |
| Expiry date | Dec 2, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2004
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light emitting device includes two AlGaAs and AlGaInP Bragg reflector layers below an active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.