Apparatus and method for sputtering ionized material in a plasma
US6132566A · kind A · utility
57Cited by
40References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 1998 |
| Grant date | Oct 17, 2000 |
| Priority date | — |
| Expiry date | Jul 30, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/916
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An external inductive coil is used in a plasma process system having a dielectric shield which separates the coil from the plasma. The shield includes channels provided along the inner side of the shield facing the plasma region. The channels inhibit the formation of a continuous metal film over the inner surface of the shield during sputtering and deposition. The sidewalls defining the channels permit RF transmission after the surfaces directly facing the plasma are coated with metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.