Anisotropic silicon nitride etching for shallow trench isolation in an high density plasma system
US6132631A · kind A · utility
19Cited by
8References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 8, 1997 |
| Grant date | Oct 17, 2000 |
| Priority date | — |
| Expiry date | Aug 8, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etchant mixture of carbon tetrafluoride and argon in a plasma etch chamber produces straight walled isolation trenches in a silicon nitride layer, the trenches having rounded bottoms and no microtrenching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.