Substrate processing chamber with tunable impedance
US6136388A · kind A · utility
33Cited by
16References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 1997 |
| Grant date | Oct 24, 2000 |
| Priority date | — |
| Expiry date | Dec 1, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32183
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate processing system that includes a deposition chamber having a reaction zone, a plasma power source for forming a plasma within the reaction zone and an impedance tuner electrically coupled to the deposition chamber. When initially formed, the plasma has a first impedance level that can be adjusted by the impedance tuner to a second impedance level. In a preferred embodiment, the impedance tuner is a variable capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.