Method for forming a shallow trench isolation structure
US6136713A · kind A · utility
12Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 2, 1998 |
| Grant date | Oct 24, 2000 |
| Priority date | — |
| Expiry date | Oct 2, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a shallow trench isolation (STI) structure adds an etching back process to a conventional method which only uses a chemical mechanical process (CMP) process to accomplish the STI structure. In the method of the invention, the CMP process preliminarily planarizes a substrate to remove an insulation layer above the trench and uses the etching back process to accomplish the STI structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.