Patent · US Expired

System and method for analyzing topological features on a surface

US6137570A · kind A · utility

96Cited by
30References
29Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 30, 1998
Grant dateOct 24, 2000
Priority date
Expiry dateJun 30, 2018

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N21/95692
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Disclosed is a method and apparatus for using far field scattered and diffracted light to determine whether a collection of topological features on a surface (e.g., a semiconductor wafer) conforms to an expected condition or quality. This determination is made by comparing the far field diffraction pattern of a surface under consideration with a corresponding diffraction pattern (a "baseline"). If the baseline diffraction pattern and far field diffraction pattern varies by more than a prescribed amount or in characteristic ways, it is inferred that the surface features are defective. The method may be implemented as a die-to-die comparison of far field diffraction patterns of two dies on a semiconductor wafer. The portion of the far field scattered and diffracted light sensitive to a relevant condition or quality can also be reimaged to obtain an improved signal-to-noise ratio.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.