Method of fabricating a glue layer of contact/via
US6140227A · kind A · utility
12Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 25, 1998 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Nov 25, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a glue layer of a contact/via. A substrate is provided and a contact/via opening is formed within a dielectric layer on the substrate to expose the substrate. A glue layer is formed to cover the contact/via opening and conformal the structure. An RF sputtering process is performed on the substrate to remove an overhang structure on the upper corner of the glue layer while it is formed. A conductive layer is then formed in the contact/via opening to electrically connect to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.