Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck
US6140612A · kind A · utility
34Cited by
15References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for controlling a temperature of a wafer during processing such as in a gas plasma or nonplasma environment wherein a wafer is positioned on a chuck. The wafer is heated and a pressurized gas is introduced into a space between the wafer and the chuck such that the pressurized gas transfers heat from the wafer to the chuck. Pressure of the pressurized gas is automatically varied such that heat transfer between the wafer and the chuck is varied in response to a difference between an actual wafer temperature and a desired wafer temperature to maintain the desired wafer temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.