Compact process chamber for improved process uniformity
US6143079A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 19, 1998 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Nov 19, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/481
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor processing chamber, capable of withstanding low pressures while transmitting radiant energy, is provided in a lightweight, compact design. The inner surface of the window is preferably substantially flat and parallel to the wafer to be processed. The window is thin in a center portion and thicker in a surrounding peripheral portion. The thickness increases in the radially outward direction, defined between the flat inner surface and a concave outer surface. Deposition uniformity is improved by employing multiple outlet ports for distributing gas laterally in a short length, enabling a compact, symmetrical geometry. Preferably, a quadra-flow system of gas distribution is used, whereby the chamber contains one inlet port and three outlet ports distributed approximately at 90 degrees around a cylindrical side wall defining the chamber space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.