Process for transferring a thin-film structure to a temporary carrier
US6143117A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1999 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Dec 14, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12583
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A process for fabricating and releasing a thin-film structure from a primary carrier for further processing. The thin-film structure is built on a metal interconnect disposed on a dielectric layer which, in turn, is deposited on a primary carrier. The thin-film structure and metal interconnect are released from the dielectric layer and primary carrier along a release interface defined between the metal interconnect and the dielectric film. Release is accomplished by disturbing the interface, either by laser ablation or dicing. The process of the present invention has at least three, specific applications: (1) the thin-film structure and metal interconnect can be released to yield a free-standing film; (2) the thin-film structure and metal interconnect can be laminated onto a permanent substrate (when building top-side down structures) and then released; and (3) the thin-film structure can be transferred to a secondary temporary carrier (when building top-side up structures) for further processing and testing, then transferred to a permanent substrate before releasing the thin-film structure and metal interconnect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.