Deuterium doping for hot carrier reliability improvement
US6143632A · kind A · utility
13Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1997 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Dec 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having reduced hot carrier degradation is achieved by doping the semiconductor substrate and gate oxide with deuterium. A conventional semiconductor device is formed with sequentially deposited metal layers and dielectric layers and a topside protective dielectric layer deposited thereon. Deuterium is introduced to the semiconductor device by using deuterium-containing reactants in at least one of the semiconductor manufacturing steps to passivate dangling silicon bonds at the silicon/oxide interface region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.