Programmable semiconductor structures and methods for making the same
US6143642A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1997 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Dec 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for making a programmable structure on a semiconductor substrate. The semiconductor structure has a first dielectric layer. The method includes plasma patterning a first metallization layer over the first dielectric layer. Forming a second dielectric layer over the first metallization layer and the first dielectric layer. Forming a plurality of tungsten plugs in the second dielectric layer. Each of the plurality of tungsten plugs are in electrical contact with the first metallization layer. Plasma patterning a second metallization layer over the second dielectric layer and the plurality of tungsten plugs, such that at least a gap over each of the tungsten plugs is not covered by the second metallization layer. Applying a programming electron dose to a portion of the second metallization layer. The method further includes submersing the semiconductor substrate into a basic solution to remove each of the plurality of tungsten plugs except for a tungsten plug that is in electrical contact with the portion of the second metallization layer that received the applied programming electron dose.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.