Silicon-rich block copolymers to achieve unbalanced vias
US6143647A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1997 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Jul 24, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/975
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit and method for making it is described. The integrated circuit includes an insulating layer, formed within a trench that separates conductive elements of a conductive layer, that has a low dielectric constant. The insulating layer is convertible at least in part into a layer that is resistant to a plasma that may be used for a photoresist ashing step or to a solvent that may be used for a via clean step. Preferably the insulating layer comprises a silicon containing block copolymer that is convertible at least in part into a silicon dioxide layer. The silicon dioxide layer protects the remainder of the insulating layer from subsequent processing, such as photoresist ashing and via clean steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.