Method of forming tungsten interconnect with tungsten oxidation to prevent tungsten loss
US6143653A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Oct 4, 1998 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Oct 4, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76888
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a metal interconnect structure and via plugs over a dielectric layer having a plurality of vias formed therein is disclosed. The method comprises the steps of: forming tungsten via plugs in the plurality of vias; depositing a metal layer over the dielectric layer and the plurality of tungsten via plugs; patterning and etching the metal layer using a photoresist layer to form the metal interconnect structure; oxidizing the metal interconnect structure and the tungsten via plugs to form a metal oxide layer over the metal interconnect structure and tungsten via plugs; and performing a wet strip on the metal interconnect structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.