Slurry for chemical mechanical polishing of copper
US6143656A · kind A · utility
35Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1998 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Oct 22, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Copper metalization is planarized by CMP employing a slurry which avoids scratching the copper surface and is highly selective to the underlying barrier layer. Embodiments include CMP a copper filled damascene opening using a slurry comprising about 0.2 to about 0.7 wt. % Al.sub.2 O.sub.3 and about 0.2 to about 2 wt. % oxalic acid to achieve a RMS no greater than about 10 .ANG..
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.