Method of fabricating semiconductor device
US6146938A · kind A · utility
11Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 1999 |
| Grant date | Nov 14, 2000 |
| Priority date | — |
| Expiry date | Jun 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/03
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A native film formed on the surface of a silicon substrate is removed. Arsenic is doped into the surface of the silicon substrate to form an n-type impurity diffusion layer as a lower capacitor electrode. A silicon nitride film as a capacitor insulating film is formed on the n-type impurity diffusion layer without growing any oxide film on the surface of the n-type impurity diffusion layer. An upper capacitor electrode is formed on the silicon nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.