Method for forming dynamic random access memory device with an ultra-short channel and an ultra-shallow junction
US6146955A · kind A · utility
8Cited by
5References
15Claims
0Family size
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Key dates
| Filing date | Nov 12, 1999 |
| Grant date | Nov 14, 2000 |
| Priority date | — |
| Expiry date | Nov 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
Abstract
A Method for forming a dynamic random access memory device with an ultra-short channel and an ultra-shallow junction is described in the invention. In the invention, the spacer is used as a mask to define the channel length of the device, so that the channel length of the device is not limited by the resolution of the photolithography process, and the performance of the device is improved thereby. Furthermore, an inversion layer serves as a junction to reduce the electric field; thus, the reliability of the device is increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.