Patent · US Expired

System and method of mapping leakage current and a defect profile of a semiconductor dielectric layer

US6147507A · kind A · utility

9Cited by

20References

21Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Sunil N. Shabde · Cupertino, US
Yowjuang W. Liu · San Jose, US
Ting Tsui · Plano, US

Key dates

Filing date	Aug 10, 1998
Grant date	Nov 14, 2000
Priority date	—
Expiry date	Aug 10, 2018

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/854
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A method (100) and a system (150) for detecting defects in a dielectric material (112) includes the steps of moving carriers (102) in the dielectric material (112), wherein the number of carriers is a function of whether defects exist in the dielectric material (112). The carriers are then deflected (130) toward a surface (116) of the dielectric material (112) using, for example, a magnetic field (132), and form an accumulated charge profile on the surface (116) of the dielectric material (112). The charge profile is then detected (140) and used to determine (180) the location of defects within the dielectric material (112).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.