Spin dependent tunneling memory
US6147900A · kind A · utility
21Cited by
13References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 24, 1999 |
| Grant date | Nov 14, 2000 |
| Priority date | — |
| Expiry date | Nov 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A digital data memory having a bit structure in a memory cell based on a dielectric intermediate separating material with two major surfaces having thereon an anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.