Method of producing smooth titanium nitride films having low resistivity
US6149777A · kind A · utility
4Cited by
13References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 25, 1999 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Jan 25, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7685
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An ion deposition sputtering process for producing a titanium nitride film having a resistivity less than about 70 .mu..OMEGA.-cm is disclosed, which comprises the steps of: (1) adjusting a percentage of ionization of a gas phase mixture to a predetermined range by adjusting the power to an ionization source; and (2) adjusting a deposition rate of said film on a substrate to a predetermined range so that a combination of said percentage of ionization of said deposition mixture and said deposition rate produces said film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.