Low-k BSG gap fill process using HDP
US6149779A · kind A · utility
16Cited by
6References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 3, 1998 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Nov 3, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76837
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A low dielectric constant gap-fill process using high density plasma (HDP) deposition is provided for depositing a boron-doped silicon oxide layer to eliminate the damaging effects of fluorine on underlying circuitry while still maintaining a low dielectric constant for an intermetal dielectric (IMD) layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.