Method for depositing low dielectric constant oxide films
US6149987A · kind A · utility
34Cited by
23References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 7, 1998 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Apr 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composite silicon dioxide layer with a reduced dielectric constant is formed by enhancing the surface sensitivity of a PECVD liner layer with activated oxygen. Pores form in an SACVD layer of silicon dioxide deposited from a TEOS precursor over the sensitized PECVD layer. The pores reduce the dielectric constant of the composite layer. Activated oxygen is provided to the PECVD layer in the form of ozone or an oxygen-based plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.