Trench-diffusion corner rounding in a shallow-trench (STI) process
US6150234A · kind A · utility
21Cited by
7References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 16, 1999 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Dec 16, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76235
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An isolation structure on an integrated circuit is formed using a shallow trench isolation process. On a substrate, a trench is formed. A thermal anneal is performed to oxidize exposed areas of the substrate to provide for round corners at a perimeter of the trench. The thermal anneal in performed in an ambient where a chlorine source is added to O.sub.2 in order to minimize facets while creating the round corners. Oxidation time is lengthened by introducing an inert gas during the thermal anneal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.