Method of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diode
US6150242A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 1999 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Mar 25, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a layer of crystalline silicon over silicon oxide and a resonant tunnel diode wherein there is provided a sufficiently clean (surface impurities<10.sup.13 /cm.sup.2), atomically smooth (rms roughness<3 Angstroms) crystalline silicon surface. Spaced apart regions of silicon oxide are formed on the surface sufficiently thin so that deposited silicon over the surface and silicon oxide will be capable of using the surface as a seed to form crystalline silicon with deposited silicon extending over the silicon oxide. The silicon is then deposited over the surface including the silicon oxide to provide the crystalline silicon over silicon oxide. The resonant tunnel diode is formed by forming a layer of silicon oxide over the deposited silicon, forming an electrically conductive layer over the layer of silicon oxide and removing the portions of the electrically conductive layer, the layer of silicon oxide and the deposited silicon from the interstices between the spaced apart regions of silicon oxide. The spaced apart regions of silicon oxide have a thickness of from about 10 to about 40 Angstroms and preferably about 15 Angstroms. The step of forming spaced apart regio…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.