Selective removal of etching residues
US6150282A · kind A · utility
13Cited by
50References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1997 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Nov 13, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Etching residue is selectively removed employing a substantially non-aqueous composition containing a fluoride containing compound and certain organic solvents. Preferred compositions also include an anhydride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.