Spacer patterned, high dielectric constant capacitor
US6150691A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 19, 1997 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Dec 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A high dielectric constant memory cell capacitor and method for producing the same, wherein the memory cell capacitor utilizes relatively large surface area conductive structures of thin spacer width pillars or having edges without sharp corners that lead to electric field breakdown of the high dielectric constant material. The combination of high dielectric constant material in a memory cell along with a relatively large surface area conductive structure is achieved through the use of a buffer material as caps on the thin edges surfaces of the relatively large surface area conductive structures to dampen or eliminate the intense electric field which would be generated at the corners of the structures during the operation of the memory cell capacitor had the caps not been present.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.