Apparatus and method for determining depth profile characteristics of a dopant material in a semiconductor device
US6151119A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 1997 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Dec 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An apparatus and method for the determination of a depth profile and/or one or more depth profile characteristics of a dopant material in a semiconductor device includes a light source which can illuminate the device at two or more illumination wavelengths, a detector that receives scattered light from the semiconductor device and determines an intensity characteristic for one or more Raman spectral lines attributable to the presence of the dopant material in the semiconductor device. The intensity characteristics of the Raman spectral lines can then be used to determine the depth profile or depth profile characteristics using profile constants measured from known samples at each of the illumination wavelengths. This apparatus and method can be used in-line because it is noninvasive, relatively quick, and nondestructive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.