Distributed feedback semiconductor laser and method for producing the same
US6151351A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1995 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Sep 28, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34373
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a distributed feedback semiconductor laser includes an InP substrate and a multiple layer structure formed on a main surface of the InP substrate, the multiple layer structure includes at least an active layer for emitting laser light and a periodical structure for distributed feedback of the laser light, and the periodical structure includes a plurality of semiconductor regions each having a triangular cross section in a direction perpendicular to the main surface of the InP substrate and parallel to a cavity length of the distributed feedback semiconductor laser, the triangular cross section projecting toward the InP substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.