Method and apparatus for predicting plasma-process surface profiles
US6151532A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 1998 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Mar 3, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32174
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention provides a method for predicting a process surface profile that a given plasma process will create on a process substrate. The prediction is based on a test surface profile, the experimental outcome of a test process which is in general different from the plasma process of interest. In another aspect, the invention provides a technique for defining a plasma process that will produce a desired surface profile. Thus, in related aspects, the invention also provides apparatus for predicting a process surface profile and determining process values, a method of configuring a plasma reactor, a method of making semiconductor devices requiring limited empirical calibration, and a device made according to the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.