Method of removing photo-resist
US6153360A · kind A · utility
1Cited by
9References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1998 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Jan 22, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/901
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of removing photo-resist. Acetone, thinner, and deionized water for scrubbing a wafer are used to clean a wafer on which a photo-resist layer is formed, so that thinner and deionized water are mutually dissolvable with acetone as medium. The photo-resist layer is then removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.