Etching process of CoSi.sub.2 layers
US6153484A · kind A · utility
22Cited by
9References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 19, 1996 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Jun 19, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to methods for controlling the etching rate of CoSi.sub.2 layers by adjusting the pH of an HF-based solution to obtain the desired etch rate. The pH of the HF-based solution may be adjusted by adding pH modifying chemicals to the solution. A further aspect of the invention is an improved method for manufacturing Schottky barrier infared detectors employing the controlled etching step. A method for reducing drain induced barrier lowering in an active transistor having a small gate length is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.