Method of using a silicon oxynitride ARC for final metal layer
US6153504A · kind A · utility
27Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 1999 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Aug 16, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/952
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A SiON ARC is formed on the uppermost metal or bonding pad layer, a topside protective layer, e.g., oxide, nitride or oxynitride, formed thereon and etching is conducted through the topside protective layer and SiON ARC to form a bonding pad opening. The use of SiON as an ARC reduces bonding pad etching time, enables a reduction in the height of the metal stack for reduced capacitance between metal lines and increased circuit speed, and improves etch marginality due to the reduced aspect ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.