Method of forming high density capping layers for copper interconnects with improved adhesion
US6153523A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 1998 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Dec 9, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The adhesion of a barrier or capping layer to a Cu or Cu alloy interconnect member is significantly enhanced by treating the exposed surface of the Cu or Cu alloy interconnect member, after CMP, with an ammonia-containing plasma and then depositing the capping layer, e.g., silicon nitride, under high density plasma conditions at an elevated temperature, such as about 450.degree. C. to about 650.degree. C., e.g. about 450.degree. C. to about 550.degree. C. High density plasma deposition at such elevated temperatures increases the surface roughness of the exposed Cu metallization, thereby further increasing adhesion of the silicon nitride capping layer and increasing the density of the silicon nitride capping layer, thereby improving its etch stop characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.