Method of forming phosphosilicate glass having a high wet-etch rate
US6153540A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 1998 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Mar 4, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for controlling the wet-etch rate and thickness uniformity of a dielectric layer, such as a phosphosilicate glass layer (PSG) layer. The method is based upon the discovery that the atmospheric pressure at which a PSG layer is deposited affects the wet-etch rate of the same, during a subsequent processing step, as well as the layer's thickness uniformity. As a result, the method of the present invention includes the step of pressurizing the atmospheric pressure of a semiconductor process chamber within a predetermined range after the substrate is deposited therein. Flowed into the deposition zone is a process gas comprising a silicon source, all oxygen source, and a phosphorous source; and maintaining the deposition zone at process conditions suitable for depositing a phosphosilicate glass layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.