Inventor · San Jose, CA, US

Paul Edward Gee

12Patents
7h-index
25Co-inventors
66Inventor score

Filing activity: Apr 4, 1996 → Oct 11, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US8664127B2 Two silicon-containing precursors for gapfill enhancing dielectric liner Electricity 463 Active
US7825038B2 Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen Electricity 244 Active
US5994209A Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films Electricity 135 Expired
US7994019B1 Silicon-ozone CVD with reduced pattern loading using incubation period deposition Electricity 34 Active
US6099647A Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films Electricity 31 Expired
US8236708B2 Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) as silicon precursor Electricity 23 Active
US6599574B1 Method and apparatus for forming a dielectric film using helium as a carrier gas Emerging Cross-Sectional Technologies 8 Expired
US8716154B2 Reduced pattern loading using silicon oxide multi-layers Electricity 3 Active
US8476142B2 Preferential dielectric gapfill Electricity 2 Active
US6153540A Method of forming phosphosilicate glass having a high wet-etch rate Electricity 1 Expired
US8012887B2 Precursor addition to silicon oxide CVD for improved low temperature gapfill Electricity 0 Active
US12315739B2 Isotropic silicon nitride removal Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.