SOI with conductive metal substrate used as VSS connection

US6153912A · kind A · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventor

• John C. Holst · San Jose, US

Key dates

• Filing date: Oct 25, 1999
• Grant date: Nov 28, 2000
• Expiry date: Oct 25, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/01

Abstract

An SOI transistor structure and SOI circuit is disclosed. The SOI transistor structure includes a conductive base layer and an insulating layer overlying the conductive base layer. A semiconductor layer overlies the insulating layer and includes a source region and a drain region therein with a channel region disposed therebetween. A conductive gate region overlies generally the channel region of the semiconductor layer. The SOI circuit includes a conductive base layer and an insulating layer overlying the conductive base layer. A semiconductor layer overlies the insulating layer. A first circuit structure and a second circuit structure are formed in a first region and second region of the semiconductor layer, respectively. A conductive contact region extends through the insulating layer and electrically connects at least one of the first circuit structure and the second circuit structure to the conductive base layer.