John C. Holst
40Patents
17h-index
27Co-inventors
81Inventor score
Filing activity: Feb 22, 1993 → Feb 16, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5920515A | Register-based redundancy circuit and method for built-in self-repair in a semiconductor memory device | Physics | 88 | Expired |
| US5598115A | Comparator cell for use in a content addressable memory | Physics | 80 | Expired |
| US5964884A | Self-timed pulse control circuit | Electricity | 70 | Expired |
| US6157244A | Power supply independent temperature sensor | Physics | 57 | Expired |
| US5446685A | Pulsed ground circuit for CAM and PAL memories | Physics | 48 | Expired |
| US5299147A | Decoder scheme for fully associative translation-lookaside buffer | Physics | 45 | Expired |
| US5790461A | Register file with bypass capability | Physics | 26 | Expired |
| US6153912A | SOI with conductive metal substrate used as VSS connection | Electricity | 26 | Expired |
| US5999039A | Active power supply filter | Electricity | 24 | Expired |
| US6188596A | Layout for semiconductor memory including multi-level sensing | Physics | 24 | Expired |
| US6127880A | Active power supply filter | Electricity | 22 | Expired |
| US6157584A | Redundancy circuit and method for semiconductor memory | Physics | 22 | Expired |
| US5883826A | Memory block select using multiple word lines to address a single memory cell row | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6058447A | Handshake circuit and operating method for self-resetting circuits | Physics | 19 | Expired |
| US6213869A | MOSFET-type device with higher driver current and lower steady state power dissipation | Electricity | 18 | Expired |
| US6054918A | Self-timed differential comparator | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6051881A | Forming local interconnects in integrated circuits | Electricity | 17 | Expired |
| US6084454A | Start-up circuit for write selects and equilibrates | Electricity | 17 | Expired |
| US6376880B1 | High-speed lateral bipolar device in SOI process | Electricity | 15 | Expired |
| US6420767B1 | Capacitively coupled DTMOS on SOI | Electricity | 15 | Expired |
| US5796651A | Memory device using a reduced word line voltage during read operations and a method of accessing such a memory device | Physics | 14 | Expired |
| US7450438B1 | Crossbar apparatus for a forwarding table memory in a router | Electricity | 13 | Expired |
| US5844836A | Memory cell having increased capacitance via a local interconnect to gate capacitor and a method for making such a cell | Electricity | 12 | Expired |
| US5940334A | Memory interface circuit including bypass data forwarding with essentially no delay | Electricity | 12 | Expired |
| US6146954A | Minimizing transistor size in integrated circuits | Electricity | 11 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.