Apparatus for control of deposit build-up on an inner surface of a plasma processing chamber
US6155203A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 1999 |
| Grant date | Dec 5, 2000 |
| Priority date | — |
| Expiry date | Dec 1, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for controlling deposit build-up on an interior surface of a dielectric member of a plasma processing chamber. The deposit build-up is controlled by selective ion bombardment of the inner surface by shifting location of a peak voltage amplitude of a voltage standing wave on an antenna such as a flat spiral coil of the plasma processing chamber. A region of high ion bombardment on the interior surface of the dielectric member is displaced by controlling the value of a termination capacitance over a range of values causing regions of low and high ion bombardment to move over the dielectric member in order to effect cleaning thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.