Method for decreasing the contact resistance of silicide contacts by retrograde implantation of source/drain regions
US6156615A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 30, 1998 |
| Grant date | Dec 5, 2000 |
| Priority date | — |
| Expiry date | Sep 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method of forming contacts for the semiconductor device performs a retrograde implant of dopant in the source/drain regions so that the concentration of the dopant within these regions is highest at a predetermined depth below the top surface of the substrate. This depth is made to coincide with the bottom surfaces of the silicide contacts at the source/drain regions. Since the bottom of the silicide contacts are located at the region of greatest doping concentration within the source/drain junctions, the contact resistance is maintained relatively low while the sheet resistance may be made lower by increasing the thickness of the silicide contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.