Retardation layer for preventing diffusion of metal layer and fabrication method thereof
US6156655A · kind A · utility
10Cited by
8References
8Claims
0Family size
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Key dates
| Filing date | Sep 30, 1999 |
| Grant date | Dec 5, 2000 |
| Priority date | — |
| Expiry date | Sep 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A retardation layer of a copper damascene process and the fabrication method thereof, to replace the conventional barrier layer with a laminated layer. The laminated layer combines the conventional barrier layer with a porous layer, wherein the porous layer can be formed either above or below the barrier layer to improve the retardation of the copper atom diffusion. Preferably, the porous layer is formed above the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.