Post clean treatment
US6156661A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 27, 1999 |
| Grant date | Dec 5, 2000 |
| Priority date | — |
| Expiry date | Aug 27, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A composition for removal of chemical residues from metal or dielectric surfaces or for chemical mechanical polishing of a copper surface is an aqueous solution with a pH between about 3.5 and about 7. The composition contains a monofunctional, difunctional or trifunctional organic acid and a buffering amount of a quaternary amine, ammonium hydroxide, hydroxylamine, hydroxylamine salt, hydrazine or hydrazine salt base. A method in accordance with the invention for removal of chemical residues from a metal or dielectric surface comprises contacting the metal or dielectric surface with the above composition for a time sufficient to remove the chemical residues. A method in accordance with the invention for chemical mechanical polishing of a copper surface comprises applying the above composition to the copper surface, and polishing the surface in the presence of the composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.