Method of forming self-aligned DRAM cell
US6159808A · kind A · utility
31Cited by
7References
12Claims
0Family size
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Key dates
| Filing date | Nov 12, 1999 |
| Grant date | Dec 12, 2000 |
| Priority date | — |
| Expiry date | Nov 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
Abstract
A method of forming a dynamic random access memory cell such that the gate conductive layer, the bit line contact, the node contact, the bit line and the node contact plug are all formed using self-aligned processes. By employing the self-aligned method of forming DRAM cell, isolation structures are no longer etched in the process of forming the node contact opening. In addition, the aspect ratio of the node contact opening is reduced and processing window is thereby widened.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.