Fabrication method for a dual damascene comprising an air-gap
US6159840A · kind A · utility
Assignees
Inventor
Key dates
| Filing date | Nov 12, 1999 |
| Grant date | Dec 12, 2000 |
| Priority date | — |
| Expiry date | Nov 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fabrication method for a dual damascene structure comprising an air-gap is provided. The method includes forming sequentially a first dielectric layer, a stop layer and a second dielectric layer on a substrate comprising a first metal layer. The first and the second dielectric layers are then defined to form a via. opening exposing the first metal layer and an opening in a predetermined position on the first and second dielectric layers. An oxide layer is then formed on the second dielectric layer covering the opening and forming a gap. The oxide layer and the second dielectric layer are then defined to form a trench, which exposes the first metal layer. A second metal layer and a via plug are then formed in the trench and the via. opening, wherein the second metal layer and the first metal layer are electrically connected through the via plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.