Insitu hardmask and metal etch in a single etcher
US6159863A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1999 |
| Grant date | Dec 12, 2000 |
| Priority date | — |
| Expiry date | Jan 22, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor wafer wherein a layer of hardmask material is formed on the surface of a metal layer formed on a layer of interlayer dielectric formed on a semiconductor substrate on and in which active devices have been formed. A layer of photoresist is formed on the surface of the layer of hardmask material, patterned and developed exposing portions of the underlying layer of hardmask material. The semiconductor wafer is placed in an etched and the layer of hardmask material is etched in a first process utilizing a combination fluorine and chlorine chemistry and the metal layer is etched in a second process utilizing a combination fluorine and chlorine chemistry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.