Method for insitu vapor generation for forming an oxide on a substrate
US6159866A · kind A · utility
21Cited by
14References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2000 |
| Grant date | Dec 12, 2000 |
| Priority date | — |
| Expiry date | Feb 22, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an oxide on a substrate. According to the method of the present invention a substrate is placed in a chamber. An oxygen containing gas and a hydrogen containing gas are then fed into the chamber. The oxygen containing gas and the hydrogen containing gas are then caused to react with one another to form water vapor in the chamber. The water vapor then oxidizes the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.